王晓，男，1989年3月出生，博士，副教授，陕西省青年科技新星。
联系电话：15902975798
电子邮箱：wangxiao@sust.edu.cn
办公地点：逸夫楼421
学习工作经历：
2021.12至今 437ccm必赢国际 437ccm必赢国际 副教授
2018.10-2021.12 437ccm必赢国际 437ccm必赢国际 讲师
2017.5-2018.10 TCL华星光电研发中心背板技术部 主任工程师
2011.10-2017.3 西安交通大学 电子科学与技术专业 工学博士
2007.8-2011.9 西安交通大学 电子科学与技术专业 工学学士
主要研究方向：
1. 平板显示器件与技术
2. 半导体材料与器件
3. 真空与半导体微纳薄膜与器件
主要科研成果：
1. 近年主持科研项目：
1) 国家自然科学基金，真空场发射三极管纳米沟道的制备及其对器件性能的调控机理研究。
2) 电子物理与器件教育部重点实验室专项基金，氧化镁薄膜二次电子发射特性增强方法和机理研究。
3) 437ccm必赢国际博士启动金，可应用于高阶LCD&OLED显示的IGZO-TFT的研究。
4) 企业横向，IGZO薄膜结晶态表征和测试.
5) 企业横向，电池组短路、开路故障注入系统.
6) 企业横向，基于质量分布属性的自由飞行条件下刚体航天器姿态运动建模研究。
2. 近年代表性学术论文：
1) X. Wang*, C. Zheng, T. Xue, Z. Shen, M. Long and S. Wu*. Nanoscale Vacuum Field Emission Triode With a Double Gate Structure. in IEEE Electron Device Letters, vol. 43, no. 2, pp. 292-295, Feb. 2022, doi: 10.1109/LED.2021.3136875.
2) Xiao Wang*, Tao Xue, Zhihua Shen, Minggang Long, Shengli Wu*. Analysis of the electron emission characteristics and working mechanism of a planar bottom gate vacuum field emission triode with a nanoscale channel. Nanoscale, 2021, 13, 14363 – 14370.
3) Xiao Wang*, Zhihua Shen, Ji Li, Shengli Wu*. Preparation and Properties of Crystalline IGZO Thin Films.Membranes, 2021, 11, 134.
4) Xiao Wang*, Zhihua Shen, Dongbo Jia，Shengli Wu*. Study on Gate Modulation Property of Vacuum Field Emission Triode[C].Vacuum Electronics Conference (IVEC), 2021 IEEE International.
5) Xiao Wang*, Shi-Min Ge, Shan Li. Fabrication of high-reliability Cu BCE-structure IGZO TFTs[J].Chinese Journal of Liquid Crystals and Displays, 2018.
6) Xiao Wang*, Shimin Ge, et al. Fabrication of Cu BCE-structure IGZO TFT for 85-inch 8K4K 120Hz GOA LCD Display.International Conference on Display Technology 2018.
7) Xiao Wang, Zhihua Shen, Shengli Wu*, Jingtao Zhang and Wenbo Hu. A new structure for improving the uniformity and electron emission efficiency of surface conduction electron emitters[J].Applied Surface Science, 2015,357:2184.
8) Xiao Wang, Zhihua Shen, Shengli Wu*, et al. Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming process[J],Solid-State Electronics, 2017,132:1.
9) Xiao Wang, Zhihua Shen, Shengli Wu*, Jintao Zhang, Wenbo Hu. Surface-conduction electron-emitter with a raised structure in the middle of the conductive film[C].Vacuum Electronics Conference (IVEC), 2015 IEEE International.(EI, WOS:000380479000197)
10) Shen Z*, Li Q,Wang X*, Tian J, Wu S. Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation.Micromachines. 2021; 12(7):729.
11) Shen Zhihua*,Wang Xiao, Li Qiaoning, Ge Bin, Jiang Linlin, Tian Jinshou, Wu Shengli. A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect.Micromachines 2022, 13(2), 286.
12) Shen Z*,Wang X , Wu S , Tian J. A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel[J]. Vacuum, 2017, 137:163-168.
13) Shen Z*,Wang X, Wu S , Tian J. Analysis of the influence of nanofissure morphology on the performance of surface-conduction electron emitters[J]. Journal of Micromechanics and Microengineering, 2016, 26(4):045011.
14) Shen Z*,Wang X, Wu S , et al. Numerical analysis of the surface-conduction electron-emitter with a new configuration[J].MODERN PHYSICS LETTERS B, 2016, 30(10):1650137.
